In addition to the experiment, the nanoscale electronics devices are currently experiencing to the moment that require more theoretical understanding, dissemination and exploitation of knowledge in nanoscale structure properties. The goal of this extensive research is to modeling, analysis and design novel nanoelectronic devices based on ballistic electron transport and void channel that has not yet been achieved satisfactorily. The research will be focused through the scientific development of state-of-the-art electronics, providing innovative devices that meet the changing needs of industry and society. Overall, the objective achievement of this work can be classified as:
- Research and Develop a ballistic, analytical model for nano-MOSFETs in the nanoscale regime, incorporating external parameters such as an electric field, magnetic field, radiation, induced defects, etc.
- Employ the ballistic electron transport models to further explore the physical properties of nanoscale MOSFETs as the quantum wire regime or in nanoscale vacuum structure.
- Design, Optimize, and analyze the unique nanostructure, for example, Graphene-Oxide-Semiconductor with a horizontal/vertical void channel to discover innovative devices.
- Research and Develop the application based on electron injection including plasma technology
- Design study the next generation devices by carrying out the research in the areas of semiconductor devices and technologies, power electronics, renewable energy and biometrics..
