2.1. To grow multi-layer III-V compound semiconductor films with a good crystalline quality, good optical and electrical properties, and effective sensibility of radiation response for radiation detections, photon detections and photovoltaic applications by multi-techniques of crystal growth e.g. Metal Organic Chemical Vapor Deposition (MOCVD), RF-Sputtering technique, electrochemical plating and others
2.2. To develop and demonstrate the prototype of P-N or P-I-N junction devices based on these multi-layer III-V compound semiconductors as radiation detectors, photon detectors or solar cells
